| PART |
Description |
Maker |
| HMC264LC3B |
GaAs MMIC SUB-HARMONIC SMT MIXER, 21 - 31 GHz
|
Hittite Microwave Corporation
|
| HMC258LC3B09 |
GaAs MMIC SUB-HARMONIC SMT MIXER, 14.5 - 19.5 GHz
|
Hittite Microwave Corporation
|
| HMC258LC3B |
GaAs MMIC SUB-HARMONIC SMT MIXER, 14.5 - 19.5 GHz
|
美国讯泰微波有限公司上海代表
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC277MS806 |
GaAs MMIC SMT SINGLE GaAs MMIC SMT SINGLE
|
Hittite Microwave Corporation
|
| 438MS8GE |
SMT GaAs HBT MMIC DIVIDE-BY-5, DC - 7.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC365S8G |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC261LM101 |
SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz
|
Hittite Microwave Corporation
|
| 365S8GE |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC365G806 |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz
|
Hittite Microwave Corporation
|
| HMC363S8G06 HMC363S8G 363S8GE |
SMT GaAs HBT MMIC DIVIDE-BY-8, DC - 12.0 GHz
|
Hittite Microwave Corporation
|
